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| Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 Features * Possible to solder radiation fin directly to printed circuit board * High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC Unit: mm 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 7.30.1 1.80.1 0.8 max. 2 1 4.60.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (TC = 25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -50 -40 -5 -1.5 -3 10 150 -55 to +150 Unit V V V A A W C C 1 1.00.1 0.10.05 0.50.1 0.750.1 3 2.30.1 (5.3) (4.35) (3.0) 2.50.1 (1.8) 2 3 1.00.2 1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G1 Package Note) Self-supported type package is also prepared. Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE1 * Conditions IC = -1 mA, IE = 0 IC = -2 mA, IB = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -1 mA IC = -1.5 A, IB = - 0.15 A IC = -2 A, IB = - 0.2 A VCE = -5 V, IC = - 0.5 A, f = 200 MHz VCB = -20 V, IE = 0, f = 1 MHz Min -50 -40 Typ Max Unit V V -1 -100 -10 80 10 -1 -1.5 150 45 220 A A A V V MHz pF hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 80 to 160 R 120 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00035AED (5.5) 1 2SB0968 PC Ta 16 TC=Ta IC VCE TC=25C IB=-40mA -35mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 IC/IB=10 -4.0 -3.5 Collector power dissipation PC (W) Collector current IC (A) 12 -3.0 -2.5 -30mA -25mA -20mA -1 8 -2.0 -15mA -1.5 -1.0 -10mA -5mA TC=100C 25C -25C - 0.1 4 - 0.5 0 0 0 40 80 120 160 0 -2 -4 -6 -8 -10 - 0.01 - 0.01 - 0.1 -1 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) -10 IC/IB=10 hFE IC 240 VCE=-5V fT I E VCB=-5V f=200MHz TC=25C 1 000 Forward current transfer ratio hFE TC=100C 25C Transition frequency fT (MHz) 200 160 -1 TC=-25C 100C 25C 100 -25C 120 - 0.1 10 80 40 - 0.01 - 0.01 - 0.1 -1 1 - 0.01 - 0.1 -1 0 10 102 103 104 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob -120 VCER RBE Collector-emitter voltage (V) (Resistor between B and E) VCER IE=0 f=1MHz TC=25C ICEO Ta TC=25C 1 000 140 120 100 80 60 40 20 0 -1 VCE=-12V -100 -60 -40 ICEO (Ta) ICEO (Ta = 25C) 0.01 0.1 1 10 -80 100 10 -20 -10 -100 0 0.001 1 0 20 40 60 80 100 120 Collector-base voltage VCB (V) Base-emitter resistance RBE (k) Ambient temperature Ta (C) 2 SJD00035AED 2SB0968 Safe operation area -10 ICP Single pulse TC=25C Collector current IC (A) -1 IC t=1ms t=1s - 0.1 - 0.01 - 0.001 - 0.1 -1 -10 -100 Collector-emitter voltage VCE (V) SJD00035AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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